Evidence of SiSiGe heterojunction roughness scattering

C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C. Y. Yu, J. Y. Wei, S. Maikap

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The separation distance between the electron channel at oxideSi interface and the strained- Sirelaxed -SiGe heterojunction can significantly affect the effective electron mobility of metal-oxide-silicon field-effect transistors due to the roughness scattering of the underneath SiSiGe heterojunction. The mobility degradation due to the SiSiGe heterojunction with the roughness of 7 nm becomes insignificant when the strained-Si thickness is larger than ~20 nm. A clear hole confinement shoulder is observed in the accumulation region of the capacitance-voltage curves, indicating that the abrupt transition from the SiGe buffer to strained Si is maintained at the rough heterojunction. The heterojunction roughness scattering not only degrades the electron mobility, but also degrades the device characteristics such as the transconductance and cut-off frequency.

Original languageEnglish
Pages (from-to)4947-4949
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
Publication statusPublished - 2004 Nov 1

Fingerprint

heterojunctions
roughness
scattering
electron mobility
silicon transistors
transconductance
shoulders
metal oxides
cut-off
field effect transistors
buffers
capacitance
degradation
electric potential
curves
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, C. W., Lee, M. H., Lee, Y. C., Chen, P. S., Yu, C. Y., Wei, J. Y., & Maikap, S. (2004). Evidence of SiSiGe heterojunction roughness scattering. Applied Physics Letters, 85(21), 4947-4949. https://doi.org/10.1063/1.1828224

Evidence of SiSiGe heterojunction roughness scattering. / Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C. Y.; Wei, J. Y.; Maikap, S.

In: Applied Physics Letters, Vol. 85, No. 21, 01.11.2004, p. 4947-4949.

Research output: Contribution to journalArticle

Liu, CW, Lee, MH, Lee, YC, Chen, PS, Yu, CY, Wei, JY & Maikap, S 2004, 'Evidence of SiSiGe heterojunction roughness scattering', Applied Physics Letters, vol. 85, no. 21, pp. 4947-4949. https://doi.org/10.1063/1.1828224
Liu CW, Lee MH, Lee YC, Chen PS, Yu CY, Wei JY et al. Evidence of SiSiGe heterojunction roughness scattering. Applied Physics Letters. 2004 Nov 1;85(21):4947-4949. https://doi.org/10.1063/1.1828224
Liu, C. W. ; Lee, M. H. ; Lee, Y. C. ; Chen, P. S. ; Yu, C. Y. ; Wei, J. Y. ; Maikap, S. / Evidence of SiSiGe heterojunction roughness scattering. In: Applied Physics Letters. 2004 ; Vol. 85, No. 21. pp. 4947-4949.
@article{e4fcace9943948c4ba22132bcdbbf300,
title = "Evidence of SiSiGe heterojunction roughness scattering",
abstract = "The separation distance between the electron channel at oxideSi interface and the strained- Sirelaxed -SiGe heterojunction can significantly affect the effective electron mobility of metal-oxide-silicon field-effect transistors due to the roughness scattering of the underneath SiSiGe heterojunction. The mobility degradation due to the SiSiGe heterojunction with the roughness of 7 nm becomes insignificant when the strained-Si thickness is larger than ~20 nm. A clear hole confinement shoulder is observed in the accumulation region of the capacitance-voltage curves, indicating that the abrupt transition from the SiGe buffer to strained Si is maintained at the rough heterojunction. The heterojunction roughness scattering not only degrades the electron mobility, but also degrades the device characteristics such as the transconductance and cut-off frequency.",
author = "Liu, {C. W.} and Lee, {M. H.} and Lee, {Y. C.} and Chen, {P. S.} and Yu, {C. Y.} and Wei, {J. Y.} and S. Maikap",
year = "2004",
month = "11",
day = "1",
doi = "10.1063/1.1828224",
language = "English",
volume = "85",
pages = "4947--4949",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Evidence of SiSiGe heterojunction roughness scattering

AU - Liu, C. W.

AU - Lee, M. H.

AU - Lee, Y. C.

AU - Chen, P. S.

AU - Yu, C. Y.

AU - Wei, J. Y.

AU - Maikap, S.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The separation distance between the electron channel at oxideSi interface and the strained- Sirelaxed -SiGe heterojunction can significantly affect the effective electron mobility of metal-oxide-silicon field-effect transistors due to the roughness scattering of the underneath SiSiGe heterojunction. The mobility degradation due to the SiSiGe heterojunction with the roughness of 7 nm becomes insignificant when the strained-Si thickness is larger than ~20 nm. A clear hole confinement shoulder is observed in the accumulation region of the capacitance-voltage curves, indicating that the abrupt transition from the SiGe buffer to strained Si is maintained at the rough heterojunction. The heterojunction roughness scattering not only degrades the electron mobility, but also degrades the device characteristics such as the transconductance and cut-off frequency.

AB - The separation distance between the electron channel at oxideSi interface and the strained- Sirelaxed -SiGe heterojunction can significantly affect the effective electron mobility of metal-oxide-silicon field-effect transistors due to the roughness scattering of the underneath SiSiGe heterojunction. The mobility degradation due to the SiSiGe heterojunction with the roughness of 7 nm becomes insignificant when the strained-Si thickness is larger than ~20 nm. A clear hole confinement shoulder is observed in the accumulation region of the capacitance-voltage curves, indicating that the abrupt transition from the SiGe buffer to strained Si is maintained at the rough heterojunction. The heterojunction roughness scattering not only degrades the electron mobility, but also degrades the device characteristics such as the transconductance and cut-off frequency.

UR - http://www.scopus.com/inward/record.url?scp=19144372900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19144372900&partnerID=8YFLogxK

U2 - 10.1063/1.1828224

DO - 10.1063/1.1828224

M3 - Article

AN - SCOPUS:19144372900

VL - 85

SP - 4947

EP - 4949

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -