Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4

Ping Lou, Ming-Che Chang, Wen Chin Wu

Research output: Contribution to journalArticle

Abstract

The normal-state transport properties are investigated for Sr 2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,± 0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

Original languageEnglish
Article number012506
Pages (from-to)125061-125064
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number1
Publication statusPublished - 2003 Jul 1

Fingerprint

Spin fluctuations
Electron scattering
Electrons
Transport properties
electron scattering
electrons
transport properties
Scattering
Impurities
impurities
electrical resistivity
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4. / Lou, Ping; Chang, Ming-Che; Wu, Wen Chin.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 68, No. 1, 012506, 01.07.2003, p. 125061-125064.

Research output: Contribution to journalArticle

@article{d9c36fe6110d4388aebcba29d6d2cc8a,
title = "Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4",
abstract = "The normal-state transport properties are investigated for Sr 2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,± 0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.",
author = "Ping Lou and Ming-Che Chang and Wu, {Wen Chin}",
year = "2003",
month = "7",
day = "1",
language = "English",
volume = "68",
pages = "125061--125064",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "1",

}

TY - JOUR

T1 - Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4

AU - Lou, Ping

AU - Chang, Ming-Che

AU - Wu, Wen Chin

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The normal-state transport properties are investigated for Sr 2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,± 0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

AB - The normal-state transport properties are investigated for Sr 2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,± 0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

UR - http://www.scopus.com/inward/record.url?scp=0141540771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141540771&partnerID=8YFLogxK

M3 - Article

VL - 68

SP - 125061

EP - 125064

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 1

M1 - 012506

ER -