INIS
evaluation
100%
layers
100%
annealing
100%
substrates
100%
epitaxy
100%
silicon
100%
germanium
100%
microstructure
75%
dislocations
50%
distribution
25%
surfaces
25%
energy
25%
morphology
25%
scanning electron microscopy
25%
crystallography
25%
mapping
25%
x-ray diffraction
25%
chemical vapor deposition
25%
transmission electron microscopy
25%
roughness
25%
hardness
25%
atomic force microscopy
25%
x-ray spectroscopy
25%
ultrahigh vacuum
25%
segregation
25%
Material Science
Silicon
100%
Germanium
100%
Epitaxial Layer
100%
Nanoindentation
100%
Microstructure
50%
Annealing
50%
Dislocation
50%
Energy-Dispersive X-Ray Spectroscopy
50%
Morphology
25%
Surface
25%
X-Ray Diffraction
25%
Scanning Electron Microscopy
25%
Characterization
25%
Atomic Force Microscopy
25%
Chemical Vapor Deposition
25%
Hardness
25%
Transmission Electron Microscopy
25%
Elastic Moduli
25%