Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate

Bo Ching He, Chun Hu Cheng*, Hua Chiang Wen, Yi Shao Lai, Ping Feng Yang, Meng Hung Lin, Wen Fa Wu, Chang Pin Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


In this paper, ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon-germanium (SiGe), and sequence to endure annealing treatment. Morphological characterization, roughness, and microstructural morphology were observed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The elements distribution, crystallographic, and nanomechanical behavior were carried out using energy-dispersive X-ray spectroscopy (EDS) mapping technique, X-ray diffraction (XRD), and nanoindentation technique. The annealing treated SiGe leads to the 2D germanium segregation on the surface. The phenomenon is interpreted in terms of dislocation-induced structural changes in annealing treatment. Thus, the dislocation propagation in the microstructure was observed. Subsequently hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment.

Original languageEnglish
Pages (from-to)63-69
Number of pages7
JournalMicroelectronics Reliability
Issue number1
Publication statusPublished - 2010 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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