TY - JOUR
T1 - Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate
AU - He, Bo Ching
AU - Cheng, Chun Hu
AU - Wen, Hua Chiang
AU - Lai, Yi Shao
AU - Yang, Ping Feng
AU - Lin, Meng Hung
AU - Wu, Wen Fa
AU - Chou, Chang Pin
N1 - Funding Information:
This research was supported by National Science Council of the Republic of China under Contract NSC-98-2221-E-009-069 and by National Nano Device Laboratories in Taiwan under Contract NDL97-C04SG-088 and NDL97-C05SG-087.
PY - 2010/1
Y1 - 2010/1
N2 - In this paper, ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon-germanium (SiGe), and sequence to endure annealing treatment. Morphological characterization, roughness, and microstructural morphology were observed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The elements distribution, crystallographic, and nanomechanical behavior were carried out using energy-dispersive X-ray spectroscopy (EDS) mapping technique, X-ray diffraction (XRD), and nanoindentation technique. The annealing treated SiGe leads to the 2D germanium segregation on the surface. The phenomenon is interpreted in terms of dislocation-induced structural changes in annealing treatment. Thus, the dislocation propagation in the microstructure was observed. Subsequently hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment.
AB - In this paper, ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon-germanium (SiGe), and sequence to endure annealing treatment. Morphological characterization, roughness, and microstructural morphology were observed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The elements distribution, crystallographic, and nanomechanical behavior were carried out using energy-dispersive X-ray spectroscopy (EDS) mapping technique, X-ray diffraction (XRD), and nanoindentation technique. The annealing treated SiGe leads to the 2D germanium segregation on the surface. The phenomenon is interpreted in terms of dislocation-induced structural changes in annealing treatment. Thus, the dislocation propagation in the microstructure was observed. Subsequently hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment.
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U2 - 10.1016/j.microrel.2009.08.005
DO - 10.1016/j.microrel.2009.08.005
M3 - Article
AN - SCOPUS:72649083548
SN - 0026-2714
VL - 50
SP - 63
EP - 69
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 1
ER -