Evaluation of the flaw depth using high-Tc SQUID

H. E. Horng*, J. T. Jeng, H. C. Yang, J. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Using high-Tc SQUID, we investigated quantitative nondestructive evaluation for flaws in conducting samples. The spatial derivative of the defect field was found to provide valuable information about the position and the depth of the flaw. By analyzing the spatial derivative of the defect field, the quantitative flaw evaluation was demonstrated.

Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalPhysica C: Superconductivity and its applications
Issue number1-4
Publication statusPublished - 2002 Feb 15


  • Defect field
  • Flaw depth
  • Nondestructive evaluation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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