Evaluation of the flaw depth using high-Tc SQUID

H. E. Horng, J. T. Jeng, H. C. Yang, J. C. Chen

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Using high-Tc SQUID, we investigated quantitative nondestructive evaluation for flaws in conducting samples. The spatial derivative of the defect field was found to provide valuable information about the position and the depth of the flaw. By analyzing the spatial derivative of the defect field, the quantitative flaw evaluation was demonstrated.

    Original languageEnglish
    Pages (from-to)303-307
    Number of pages5
    JournalPhysica C: Superconductivity and its applications
    Volume367
    Issue number1-4
    DOIs
    Publication statusPublished - 2002 Feb 15

    Keywords

    • Defect field
    • Flaw depth
    • Nondestructive evaluation
    • SQUID

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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