Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Chun Hu Cheng; Albert Chin

doi:10.7567/APEX.6.041203

Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Chun Hu Cheng
, Albert Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO₂, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

Original language	English
Article number	041203
Journal	Applied Physics Express
Volume	6
Issue number	4
DOIs	https://doi.org/10.7567/APEX.6.041203
Publication status	Published - 2013 Apr

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.7567/APEX.6.041203

Cite this

@article{a8cf3a4c8289449b98b2dd66f9db3cf8,

title = "Evaluation of temperature stability of trilayer resistive memories using work-function tuning",

abstract = "A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.",

author = "Cheng, \{Chun Hu\} and Albert Chin",

year = "2013",

month = apr,

doi = "10.7567/APEX.6.041203",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Evaluation of temperature stability of trilayer resistive memories using work-function tuning

AU - Cheng, Chun Hu

AU - Chin, Albert

PY - 2013/4

Y1 - 2013/4

N2 - A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

AB - A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

UR - https://www.scopus.com/pages/publications/84880914856

UR - https://www.scopus.com/pages/publications/84880914856#tab=citedBy

U2 - 10.7567/APEX.6.041203

DO - 10.7567/APEX.6.041203

M3 - Article

AN - SCOPUS:84880914856

SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 041203

ER -

Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Abstract

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