TY - JOUR
T1 - Evaluation of temperature stability of trilayer resistive memories using work-function tuning
AU - Cheng, Chun Hu
AU - Chin, Albert
PY - 2013/4
Y1 - 2013/4
N2 - A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.
AB - A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.
UR - http://www.scopus.com/inward/record.url?scp=84880914856&partnerID=8YFLogxK
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U2 - 10.7567/APEX.6.041203
DO - 10.7567/APEX.6.041203
M3 - Article
AN - SCOPUS:84880914856
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
M1 - 041203
ER -