Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Chun Hu Cheng, Albert Chin

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

    Original languageEnglish
    Article number041203
    JournalApplied Physics Express
    Volume6
    Issue number4
    DOIs
    Publication statusPublished - 2013 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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