Evaluation of temperature stability of trilayer resistive memories using work-function tuning

Chun Hu Cheng, Albert Chin

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A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 106 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

Original languageEnglish
Article number041203
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2013 Apr 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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