Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells

Yan Syun Chen; Li Yu Li; Peichen Yu; Yu Chiang Chao; Hsinfei Meng; Sheng Fu Horng

doi:10.1109/PVSC40753.2019.8980931

Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells

Yan Syun Chen
, Li Yu Li
, Peichen Yu
, Yu Chiang Chao
, Hsinfei Meng
, Sheng Fu Horng

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2675-2678
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980931
Publication status	Published - 2019 Jun
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 2019 Jun 16 → 2019 Jun 21

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	2019/06/16 → 2019/06/21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Perovskite hybrid solar cell
photovoltaic cells
silicon

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8980931

Cite this

Chen, Y. S., Li, L. Y., Yu, P., Chao, Y. C., Meng, H., & Horng, S. F. (2019). Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2675-2678). Article 8980931 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980931

Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells. / Chen, Yan Syun; Li, Li Yu; Yu, Peichen et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2675-2678 8980931 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, YS, Li, LY, Yu, P, Chao, YC, Meng, H & Horng, SF 2019, Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980931, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2675-2678, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 2019/06/16. https://doi.org/10.1109/PVSC40753.2019.8980931

Chen YS, Li LY, Yu P, Chao YC, Meng H, Horng SF. Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2675-2678. 8980931. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980931

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title = "Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells",

abstract = "we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53\%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.",

keywords = "Perovskite hybrid solar cell, photovoltaic cells, silicon",

author = "Chen, \{Yan Syun\} and Li, \{Li Yu\} and Peichen Yu and Chao, \{Yu Chiang\} and Hsinfei Meng and Horng, \{Sheng Fu\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

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AU - Chen, Yan Syun

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AU - Yu, Peichen

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AU - Horng, Sheng Fu

PY - 2019/6

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N2 - we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.

AB - we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.

KW - Perovskite hybrid solar cell

KW - photovoltaic cells

KW - silicon

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Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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