Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen; L. M. Wang; H. C. Yang; H. E. Horng

doi:10.1016/0921-4526(94)90525-8

Etching of YBa₂Cu₃O_y surface by scanning tunneling microscope

S. Chen^*, L. M. Wang, H. C. Yang, H. E. Horng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa₂Cu₃O_y PrBa₂Cu₃O_y ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

Original language	English
Pages (from-to)	391-392
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	194-196
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4526(94)90525-8
Publication status	Published - 1994 Feb 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.",

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AU - Chen, S.

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N2 - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

AB - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

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Etching of YBa₂Cu₃O_y surface by scanning tunneling microscope

Abstract

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