Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen*, L. M. Wang, H. C. Yang, H. E. Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

Original languageEnglish
Pages (from-to)391-392
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Issue numberPART 1
Publication statusPublished - 1994 Feb 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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