Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen*, L. M. Wang, Hong-Chang Yang, Herng-Er Horng

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

    Original languageEnglish
    Pages (from-to)391-392
    Number of pages2
    JournalPhysica B: Physics of Condensed Matter
    Issue numberPART 1
    Publication statusPublished - 1994 Feb 2

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering


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