Etching of YBa2Cu3Oy surface by scanning tunneling microscope

S. Chen, L. M. Wang, Hong-Chang Yang, Herng-Er Horng

Research output: Contribution to journalArticle

Abstract

We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

Original languageEnglish
Pages (from-to)391-392
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume194-196
Issue numberPART 1
DOIs
Publication statusPublished - 1994 Feb 2

Fingerprint

Etching
Microscopes
microscopes
etching
Scanning
scanning
Bias voltage
Nucleation
nucleation
electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Etching of YBa2Cu3Oy surface by scanning tunneling microscope. / Chen, S.; Wang, L. M.; Yang, Hong-Chang; Horng, Herng-Er.

In: Physica B: Physics of Condensed Matter, Vol. 194-196, No. PART 1, 02.02.1994, p. 391-392.

Research output: Contribution to journalArticle

Chen, S. ; Wang, L. M. ; Yang, Hong-Chang ; Horng, Herng-Er. / Etching of YBa2Cu3Oy surface by scanning tunneling microscope. In: Physica B: Physics of Condensed Matter. 1994 ; Vol. 194-196, No. PART 1. pp. 391-392.
@article{d6319c55728345bebf55a13718b956d1,
title = "Etching of YBa2Cu3Oy surface by scanning tunneling microscope",
abstract = "We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.",
author = "S. Chen and Wang, {L. M.} and Hong-Chang Yang and Herng-Er Horng",
year = "1994",
month = "2",
day = "2",
doi = "10.1016/0921-4526(94)90525-8",
language = "English",
volume = "194-196",
pages = "391--392",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "PART 1",

}

TY - JOUR

T1 - Etching of YBa2Cu3Oy surface by scanning tunneling microscope

AU - Chen, S.

AU - Wang, L. M.

AU - Yang, Hong-Chang

AU - Horng, Herng-Er

PY - 1994/2/2

Y1 - 1994/2/2

N2 - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

AB - We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy PrBa2Cu3Oy ( 120 960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from -600 to -1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO PBCO ( 120 960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.

UR - http://www.scopus.com/inward/record.url?scp=0028759425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028759425&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(94)90525-8

DO - 10.1016/0921-4526(94)90525-8

M3 - Article

AN - SCOPUS:0028759425

VL - 194-196

SP - 391

EP - 392

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - PART 1

ER -