Estimating the junction temperature of InGaN and AlGaInP light-emitting diodes

Ya Ju Lee*, Chia Jung Lee, Chih Hao Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperaturedependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs.

Original languageEnglish
Article number04DG18
JournalJapanese Journal of Applied Physics
Issue number4 PART 2
Publication statusPublished - 2011 Apr

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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