Estimating the junction temperature of InGaN and AlGaInP light-emitting diodes

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperaturedependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III-V compound-based semiconductor LEDs.

Original languageEnglish
Article number04DG18
JournalJapanese Journal of Applied Physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

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Light emitting diodes
estimating
light emitting diodes
Temperature
temperature
semiconductor diodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Estimating the junction temperature of InGaN and AlGaInP light-emitting diodes. / Lee, Ya Ju; Lee, Chia Jung; Chen, Chih Hao.

In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DG18, 01.04.2011.

Research output: Contribution to journalArticle

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