ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process

Chun Yu Lin; Rui Hong Liu; Ming Dou Ker

doi:10.1109/IRPS.2016.7574602

ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process

Chun Yu Lin, Rui Hong Liu, Ming Dou Ker

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

An RF transceiver front-end for 2.4GHz applications realized by a fully integrated T/R switch with ESD self-protection capability is presented in this work. Experimental results show that the proposed design without using any additional ESD protection device can provide enough ESD self-protection capability with good RF performances.

Original language	English
Title of host publication	2016 International Reliability Physics Symposium, IRPS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	EL11-EL14
ISBN (Electronic)	9781467391368
DOIs	https://doi.org/10.1109/IRPS.2016.7574602
Publication status	Published - 2016 Sept 22
Event	2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States Duration: 2016 Apr 17 → 2016 Apr 21

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2016-September
ISSN (Print)	1541-7026

Other

Other	2016 International Reliability Physics Symposium, IRPS 2016
Country/Territory	United States
City	Pasadena
Period	2016/04/17 → 2016/04/21

Keywords

Electrostatic discharges (ESD)
radio-frequency (RF)
transceiver
transmit/receive (T/R) switch

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2016.7574602

Cite this

Lin, C. Y., Liu, R. H., & Ker, M. D. (2016). ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. EL11-EL14). Article 7574602 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574602

ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process. / Lin, Chun Yu; Liu, Rui Hong; Ker, Ming Dou.
2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. EL11-EL14 7574602 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY, Liu, RH & Ker, MD 2016, ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process. in 2016 International Reliability Physics Symposium, IRPS 2016., 7574602, IEEE International Reliability Physics Symposium Proceedings, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. EL11-EL14, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 2016/04/17. https://doi.org/10.1109/IRPS.2016.7574602

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abstract = "An RF transceiver front-end for 2.4GHz applications realized by a fully integrated T/R switch with ESD self-protection capability is presented in this work. Experimental results show that the proposed design without using any additional ESD protection device can provide enough ESD self-protection capability with good RF performances.",

keywords = "Electrostatic discharges (ESD), radio-frequency (RF), transceiver, transmit/receive (T/R) switch",

author = "Lin, {Chun Yu} and Liu, {Rui Hong} and Ker, {Ming Dou}",

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ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process

Abstract

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Keywords

ASJC Scopus subject areas

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