ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process

Chun Yu Lin, Rui Hong Liu, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

An RF transceiver front-end for 2.4GHz applications realized by a fully integrated T/R switch with ESD self-protection capability is presented in this work. Experimental results show that the proposed design without using any additional ESD protection device can provide enough ESD self-protection capability with good RF performances.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesEL11-EL14
ISBN (Electronic)9781467391368
DOIs
Publication statusPublished - 2016 Sep 22
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 2016 Apr 172016 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Other

Other2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period16/4/1716/4/21

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Keywords

  • Electrostatic discharges (ESD)
  • radio-frequency (RF)
  • transceiver
  • transmit/receive (T/R) switch

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lin, C. Y., Liu, R. H., & Ker, M. D. (2016). ESD self-protection design on 2.4-GHz T/R switch for RF application in CMOS process. In 2016 International Reliability Physics Symposium, IRPS 2016 (pp. EL11-EL14). [7574602] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574602