ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin; Li Wei Chu; Ming Dou Ker; Ming Hsiang Song; Chewn Pu Jou; Tse Hua Lu; Jen Chou Tseng; Ming Hsien Tsai; Tsun Lai Hsu; Ping Fang Hung; Tzu Heng Chang

doi:10.1109/IRPS.2012.6241893

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin^*, Li Wei Chu, Ming Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

Original language	English
Title of host publication	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Pages	EL.3.1-EL.3.5
DOIs	https://doi.org/10.1109/IRPS.2012.6241893
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States Duration: 2012 Apr 15 → 2012 Apr 19

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Country/Territory	United States
City	Anaheim, CA
Period	2012/04/15 → 2012/04/19

Keywords

Electrostatic discharge (ESD)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2012.6241893

Cite this

Lin, C. Y., Chu, L. W., Ker, M. D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., & Chang, T. H. (2012). ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. EL.3.1-EL.3.5). Article 6241893 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241893

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. / Lin, Chun Yu; Chu, Li Wei; Ker, Ming Dou et al.
2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. p. EL.3.1-EL.3.5 6241893 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY, Chu, LW, Ker, MD, Song, MH, Jou, CP, Lu, TH, Tseng, JC, Tsai, MH, Hsu, TL, Hung, PF & Chang, TH 2012, ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. in 2012 IEEE International Reliability Physics Symposium, IRPS 2012., 6241893, IEEE International Reliability Physics Symposium Proceedings, pp. EL.3.1-EL.3.5, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, United States, 2012/04/15. https://doi.org/10.1109/IRPS.2012.6241893

@inproceedings{914f1300a93e46739735b264388babc5,

title = "ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process",

abstract = "To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.",

keywords = "Electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Chu, {Li Wei} and Ker, {Ming Dou} and Song, {Ming Hsiang} and Jou, {Chewn Pu} and Lu, {Tse Hua} and Tseng, {Jen Chou} and Tsai, {Ming Hsien} and Hsu, {Tsun Lai} and Hung, {Ping Fang} and Chang, {Tzu Heng}",

year = "2012",

doi = "10.1109/IRPS.2012.6241893",

language = "English",

isbn = "9781457716799",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "EL.3.1--EL.3.5",

booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",

note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",

}

TY - GEN

T1 - ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Ker, Ming Dou

AU - Song, Ming Hsiang

AU - Jou, Chewn Pu

AU - Lu, Tse Hua

AU - Tseng, Jen Chou

AU - Tsai, Ming Hsien

AU - Hsu, Tsun Lai

AU - Hung, Ping Fang

AU - Chang, Tzu Heng

PY - 2012

Y1 - 2012

N2 - To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

AB - To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

KW - Electrostatic discharge (ESD)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=84866632420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866632420&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2012.6241893

DO - 10.1109/IRPS.2012.6241893

M3 - Conference contribution

AN - SCOPUS:84866632420

SN - 9781457716799

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - EL.3.1-EL.3.5

BT - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

T2 - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

Y2 - 15 April 2012 through 19 April 2012

ER -

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Abstract

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