ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin, Li Wei Chu, Ming Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
PagesEL.3.1-EL.3.5
DOIs
Publication statusPublished - 2012 Sep 28
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: 2012 Apr 152012 Apr 19

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period12/4/1512/4/19

Keywords

  • Electrostatic discharge (ESD)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Lin, C. Y., Chu, L. W., Ker, M. D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., & Chang, T. H. (2012). ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. EL.3.1-EL.3.5). [6241893] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241893