ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun Yu Lin, Ming Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

Original languageEnglish
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1480-1483
Number of pages4
ISBN (Print)9781479934324
DOIs
Publication statusPublished - 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: 2014 Jun 12014 Jun 5

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/TerritoryAustralia
CityMelbourne, VIC
Period2014/06/012014/06/05

Keywords

  • Diode
  • ESD
  • T-coil
  • radio-frequency (RF)
  • wideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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