@inproceedings{738b050b958f4437bc468230a45b6e64,
title = "ESD protection design for wideband RF applications in 65-nm CMOS process",
abstract = "All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.",
keywords = "Diode, ESD, T-coil, radio-frequency (RF), wideband",
author = "Chu, {Li Wei} and Lin, {Chun Yu} and Ker, {Ming Dou} and Song, {Ming Hsiang} and Tseng, {Jen Chou} and Jou, {Chewn Pu} and Tsai, {Ming Hsien}",
year = "2014",
doi = "10.1109/ISCAS.2014.6865426",
language = "English",
isbn = "9781479934324",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1480--1483",
booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",
note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}