ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun-Yu Lin, Ming Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

Original languageEnglish
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1480-1483
Number of pages4
ISBN (Print)9781479934324
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: 2014 Jun 12014 Jun 5

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CountryAustralia
CityMelbourne, VIC
Period14/6/114/6/5

Fingerprint

Electrostatic discharge
Networks (circuits)
Diodes
Capacitance
Tuning
Specifications
Communication

Keywords

  • Diode
  • ESD
  • T-coil
  • radio-frequency (RF)
  • wideband

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chu, L. W., Lin, C-Y., Ker, M. D., Song, M. H., Tseng, J. C., Jou, C. P., & Tsai, M. H. (2014). ESD protection design for wideband RF applications in 65-nm CMOS process. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 1480-1483). [6865426] (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process. / Chu, Li Wei; Lin, Chun-Yu; Ker, Ming Dou; Song, Ming Hsiang; Tseng, Jen Chou; Jou, Chewn Pu; Tsai, Ming Hsien.

2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1480-1483 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chu, LW, Lin, C-Y, Ker, MD, Song, MH, Tseng, JC, Jou, CP & Tsai, MH 2014, ESD protection design for wideband RF applications in 65-nm CMOS process. in 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865426, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 1480-1483, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 14/6/1. https://doi.org/10.1109/ISCAS.2014.6865426
Chu LW, Lin C-Y, Ker MD, Song MH, Tseng JC, Jou CP et al. ESD protection design for wideband RF applications in 65-nm CMOS process. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1480-1483. 6865426. (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2014.6865426
Chu, Li Wei ; Lin, Chun-Yu ; Ker, Ming Dou ; Song, Ming Hsiang ; Tseng, Jen Chou ; Jou, Chewn Pu ; Tsai, Ming Hsien. / ESD protection design for wideband RF applications in 65-nm CMOS process. 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1480-1483 (Proceedings - IEEE International Symposium on Circuits and Systems).
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