ESD protection design for RF circuits in CMOS technology with low-c implementation

Chun Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device, low capacitance (low-C) design on ESD protection device is a solution. With the smaller layout area and small parasitic capacitance under the same ESD robustness, silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs. In this paper, the modified lateral SCR (MLSCR) with the waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance can be reduced. Besides, the fast turn-on design on MLSCR without extra parasitic capacitance from the trigger circuit adding on the I/O pad is also investigated in this work.

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages70-75
Number of pages6
Publication statusPublished - 2008 Sep 29
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: 2008 Mar 152008 Mar 17

Publication series

NameProceedings - Electrochemical Society
VolumePV 2008-1

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period08/3/1508/3/17

Keywords

  • ESD protection
  • Electrostatic discharge (ESD)
  • Low capacitance (low-C)
  • Radio-frequency (RF)
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electrochemistry

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  • Cite this

    Lin, C. Y., & Ker, M. D. (2008). ESD protection design for RF circuits in CMOS technology with low-c implementation. In Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology (pp. 70-75). (Proceedings - Electrochemical Society; Vol. PV 2008-1).