ESD protection design for high-speed circuits in nanoscale CMOS process

Chun Yu Lin; Rong Kun Chang

doi:10.1109/ISICIR.2016.7829726

ESD protection design for high-speed circuits in nanoscale CMOS process

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.

Original language	English
Title of host publication	2016 International Symposium on Integrated Circuits, ISIC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467390194
DOIs	https://doi.org/10.1109/ISICIR.2016.7829726
Publication status	Published - 2017 Jan 23
Event	2016 International Symposium on Integrated Circuits, ISIC 2016 - Singapore, Singapore Duration: 2016 Dec 12 → 2016 Dec 14

Publication series

Name	2016 International Symposium on Integrated Circuits, ISIC 2016

Conference

Conference	2016 International Symposium on Integrated Circuits, ISIC 2016
Country/Territory	Singapore
City	Singapore
Period	2016/12/12 → 2016/12/14

Keywords

CMOS
electrostatic discharge (ESD) protection
high-speed circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Computer Networks and Communications
Hardware and Architecture

Access to Document

10.1109/ISICIR.2016.7829726

Cite this

ESD protection design for high-speed circuits in nanoscale CMOS process. / Lin, Chun Yu; Chang, Rong Kun.

2016 International Symposium on Integrated Circuits, ISIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7829726 (2016 International Symposium on Integrated Circuits, ISIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY & Chang, RK 2017, ESD protection design for high-speed circuits in nanoscale CMOS process. in 2016 International Symposium on Integrated Circuits, ISIC 2016., 7829726, 2016 International Symposium on Integrated Circuits, ISIC 2016, Institute of Electrical and Electronics Engineers Inc., 2016 International Symposium on Integrated Circuits, ISIC 2016, Singapore, Singapore, 2016/12/12. https://doi.org/10.1109/ISICIR.2016.7829726

@inproceedings{56ff56d0b3ce414db86a9b118d033632,

title = "ESD protection design for high-speed circuits in nanoscale CMOS process",

abstract = "To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.",

keywords = "CMOS, electrostatic discharge (ESD) protection, high-speed circuits",

author = "Lin, {Chun Yu} and Chang, {Rong Kun}",

note = "Funding Information: This work was supported in part by Ministry of Science and Technology (MOST), Taiwan, under Contract of MOST 105-2622-E-003-001-CC2, and in part by Amazing Microelectronic Corp., Taiwan. Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Symposium on Integrated Circuits, ISIC 2016 ; Conference date: 12-12-2016 Through 14-12-2016",

year = "2017",

month = jan,

day = "23",

doi = "10.1109/ISICIR.2016.7829726",

language = "English",

series = "2016 International Symposium on Integrated Circuits, ISIC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 International Symposium on Integrated Circuits, ISIC 2016",

}

TY - GEN

T1 - ESD protection design for high-speed circuits in nanoscale CMOS process

AU - Lin, Chun Yu

AU - Chang, Rong Kun

N1 - Funding Information: This work was supported in part by Ministry of Science and Technology (MOST), Taiwan, under Contract of MOST 105-2622-E-003-001-CC2, and in part by Amazing Microelectronic Corp., Taiwan. Publisher Copyright: © 2016 IEEE.

PY - 2017/1/23

Y1 - 2017/1/23

N2 - To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.

AB - To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.

KW - CMOS

KW - electrostatic discharge (ESD) protection

KW - high-speed circuits

UR - http://www.scopus.com/inward/record.url?scp=85013769785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013769785&partnerID=8YFLogxK

U2 - 10.1109/ISICIR.2016.7829726

DO - 10.1109/ISICIR.2016.7829726

M3 - Conference contribution

AN - SCOPUS:85013769785

T3 - 2016 International Symposium on Integrated Circuits, ISIC 2016

BT - 2016 International Symposium on Integrated Circuits, ISIC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Symposium on Integrated Circuits, ISIC 2016

Y2 - 12 December 2016 through 14 December 2016

ER -

ESD protection design for high-speed circuits in nanoscale CMOS process

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this