Abstract
To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.
Original language | English |
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Title of host publication | 2016 International Symposium on Integrated Circuits, ISIC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781467390194 |
DOIs | |
Publication status | Published - 2017 Jan 23 |
Event | 2016 International Symposium on Integrated Circuits, ISIC 2016 - Singapore, Singapore Duration: 2016 Dec 12 → 2016 Dec 14 |
Publication series
Name | 2016 International Symposium on Integrated Circuits, ISIC 2016 |
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Conference
Conference | 2016 International Symposium on Integrated Circuits, ISIC 2016 |
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Country | Singapore |
City | Singapore |
Period | 16/12/12 → 16/12/14 |
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Keywords
- CMOS
- electrostatic discharge (ESD) protection
- high-speed circuits
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Computer Networks and Communications
- Hardware and Architecture
Cite this
ESD protection design for high-speed circuits in nanoscale CMOS process. / Lin, Chun Yu; Chang, Rong Kun.
2016 International Symposium on Integrated Circuits, ISIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7829726 (2016 International Symposium on Integrated Circuits, ISIC 2016).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ESD protection design for high-speed circuits in nanoscale CMOS process
AU - Lin, Chun Yu
AU - Chang, Rong Kun
PY - 2017/1/23
Y1 - 2017/1/23
N2 - To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.
AB - To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.
KW - CMOS
KW - electrostatic discharge (ESD) protection
KW - high-speed circuits
UR - http://www.scopus.com/inward/record.url?scp=85013769785&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85013769785&partnerID=8YFLogxK
U2 - 10.1109/ISICIR.2016.7829726
DO - 10.1109/ISICIR.2016.7829726
M3 - Conference contribution
AN - SCOPUS:85013769785
T3 - 2016 International Symposium on Integrated Circuits, ISIC 2016
BT - 2016 International Symposium on Integrated Circuits, ISIC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -