Abstract
The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
| Original language | English |
|---|---|
| Title of host publication | 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 322-324 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781479966707 |
| DOIs | |
| Publication status | Published - 2015 Aug 3 |
| Event | Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 - Taipei, Taiwan Duration: 2015 May 25 → 2015 May 29 |
Other
| Other | Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 |
|---|---|
| Country | Taiwan |
| City | Taipei |
| Period | 15/5/25 → 15/5/29 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
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Cite this
Lin, C-Y., Fan, M. L., & Fu, W. H. (2015). ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. In 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 (pp. 322-324). [7175245] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEMC.2015.7175245