Abstract
The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
| Original language | English |
|---|---|
| Title of host publication | 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 322-324 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781479966707 |
| DOIs | |
| Publication status | Published - 2015 Aug 3 |
| Event | Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 - Taipei, Taiwan Duration: 2015 May 25 → 2015 May 29 |
Other
| Other | Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015 |
|---|---|
| Country | Taiwan |
| City | Taipei |
| Period | 15/5/25 → 15/5/29 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
Cite this
ESD protection design for gigahertz differential LNA in a 65-nm CMOS process. / Lin, Chun-Yu; Fan, Mei Lian; Fu, Wei Hao.
2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 322-324 7175245.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ESD protection design for gigahertz differential LNA in a 65-nm CMOS process
AU - Lin, Chun-Yu
AU - Fan, Mei Lian
AU - Fu, Wei Hao
PY - 2015/8/3
Y1 - 2015/8/3
N2 - The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
AB - The electrostatic discharge (ESD) immunity test for EMC was one important reliability regulation. The turn-on-efficient on-chip ESD protection circuit is required to clamp the overstress voltage. A new design of ESD protection diodes with embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential low-noise amplifier (LNA). Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
UR - http://www.scopus.com/inward/record.url?scp=84964031664&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964031664&partnerID=8YFLogxK
U2 - 10.1109/APEMC.2015.7175245
DO - 10.1109/APEMC.2015.7175245
M3 - Conference contribution
AN - SCOPUS:84964031664
SP - 322
EP - 324
BT - 2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -