ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

Ming Dou Ker, Chun-Yu Lin, Guo Xuan Meng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.

Original languageEnglish
Title of host publication2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages1292-1295
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 19
Event2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
Duration: 2008 May 182008 May 21

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
CountryUnited States
CitySeattle, WA
Period08/5/1808/5/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ker, M. D., Lin, C-Y., & Meng, G. X. (2008). ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR. In 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 (pp. 1292-1295). [4541662] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2008.4541662