ESD protection design for 60-GHz LNA with inductor-triggered SCR in 65-nm CMOS process

Chun-Yu Lin, Li Wei Chu, Ming Dou Ker

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

To effectively protect the radio-frequency (RF) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance. In this paper, an SCR device assisted with an inductor is proposed to improve the turn-on efficiency for ESD protection. Besides, the inductor can be also designed to resonate with the parasitic capacitance of the SCR device at the selected frequency band for RF performance fine tuning. Experimental results of the ESD protection design with inductor-triggered SCR in a nanoscale CMOS process have been successfully verified at 60-GHz frequency. The ESD protection design with inductor-triggered SCR has been implemented in cell configuration with compact size, which can be directly used in the RF receiver circuits. To verify the RF characteristics and ESD robustness in the RF receiver, the inductor-triggered SCR has been applied to a 60-GHz low-noise amplifier (LNA). Verified in a silicon chip, the 60-GHz LNA with the inductor-triggered SCR can achieve good RF performances and high ESD robustness.

Original languageEnglish
Article number06129526
Pages (from-to)714-723
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number3 PART 2
DOIs
Publication statusPublished - 2012 Mar 1

Fingerprint

silicon controlled rectifiers
Electrostatic discharge
Low noise amplifiers
inductors
Thyristors
low noise
CMOS
amplifiers
electrostatics
radio frequencies
Capacitance
receivers
capacitance
chips
Networks (circuits)
Frequency bands
Tuning
tuning
damage
Silicon

Keywords

  • 60 GHz
  • Electrostatic discharge (ESD)
  • low-noise amplifier (LNA)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

ESD protection design for 60-GHz LNA with inductor-triggered SCR in 65-nm CMOS process. / Lin, Chun-Yu; Chu, Li Wei; Ker, Ming Dou.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 3 PART 2, 06129526, 01.03.2012, p. 714-723.

Research output: Contribution to journalArticle

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