Erratum: On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence (Appl. Phys. Lett. (1997) 71(3) (347–349) (10.1063/1.119971))

H. Liu; J. G. Kim; M. H. Ludwig; R. M. Park

doi:10.1063/1.120565

Erratum: On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence (Appl. Phys. Lett. (1997) 71(3) (347–349) (10.1063/1.119971))

H. Liu, J. G. Kim, M. H. Ludwig, R. M. Park

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	2544
Number of pages	1
Journal	Applied Physics Letters
Volume	71
Issue number	17
DOIs	https://doi.org/10.1063/1.120565
Publication status	Published - 1997 Oct 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120565

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Erratum: On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence (Appl. Phys. Lett. (1997) 71(3) (347–349) (10.1063/1.119971)). / Liu, H.; Kim, J. G.; Ludwig, M. H. et al.
In: Applied Physics Letters, Vol. 71, No. 17, 27.10.1997, p. 2544.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence (Appl. Phys. Lett. (1997) 71(3) (347–349) (10.1063/1.119971))

ASJC Scopus subject areas

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