Erratum: On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence (Appl. Phys. Lett. (1997) 71(3) (347–349) (10.1063/1.119971))

H. Liu, J. G. Kim, M. H. Ludwig, R. M. Park

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Pages (from-to)2544
Number of pages1
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 1997 Oct 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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