INIS
surfaces
100%
films
100%
layers
100%
dielectrics
100%
epitaxy
100%
ion beams
100%
pentacene
100%
transistors
42%
thin films
42%
molecules
28%
raman spectroscopy
28%
argon ions
28%
devices
14%
saturation
14%
investigations
14%
scanning electron microscopy
14%
mobility
14%
glass
14%
temperature range 0273-0400 k
14%
evaporation
14%
coupling
14%
silicon oxides
14%
substrates
14%
photoluminescence
14%
thickness
14%
fabrication
14%
x-ray diffraction
14%
liquid crystals
14%
carriers
14%
indium
14%
tin oxides
14%
high vacuum
14%
Material Science
Surface
100%
Dielectric Material
100%
Thin-Film Transistor
100%
Raman Spectroscopy
66%
Temperature
33%
Silicon Dioxide
33%
Devices
33%
Photoluminescence
33%
Film
33%
Scanning Electron Microscopy
33%
Indium Tin Oxide
33%
Glass
33%
Liquid Crystal
33%
Saturation
33%