Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

Y. J. Lee; J. M. Hwang; T. C. Hsu; M. H. Hsieh; M. J. Jou; B. J. Lee; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1109/LPT.2006.874737

Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journal › Article › peer-review

254 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.

Original language	English
Pages (from-to)	1152-1154
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2006.874737
Publication status	Published - 2006 May 15
Externally published	Yes

Keywords

GaN
Light-emitting diode (LED)
Sapphire chemical wet etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.874737

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title = "Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates",

abstract = "GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.",

keywords = "GaN, Light-emitting diode (LED), Sapphire chemical wet etching",

author = "Lee, {Y. J.} and Hwang, {J. M.} and Hsu, {T. C.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

note = "Funding Information: Manuscript received December 21, 2005; revised March 2, 2006. This work was supported by the National Science Council, Republic of China, under Contract NSC 94-2752-E-009-007-PAE.",

year = "2006",

month = may,

day = "15",

doi = "10.1109/LPT.2006.874737",

language = "English",

volume = "18",

pages = "1152--1154",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

AU - Lee, Y. J.

AU - Hwang, J. M.

AU - Hsu, T. C.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

N1 - Funding Information: Manuscript received December 21, 2005; revised March 2, 2006. This work was supported by the National Science Council, Republic of China, under Contract NSC 94-2752-E-009-007-PAE.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.

AB - GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.

KW - GaN

KW - Light-emitting diode (LED)

KW - Sapphire chemical wet etching

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Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

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Keywords

ASJC Scopus subject areas

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