Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

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    226 Citations (Scopus)


    GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57° against {0001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.

    Original languageEnglish
    Pages (from-to)1152-1154
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Issue number10
    Publication statusPublished - 2006 May 15


    • GaN
    • Light-emitting diode (LED)
    • Sapphire chemical wet etching

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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