Enhancing the conversion efficiency of red emission by spin-coating CdSe quantum dots on the green nanorod light-emitting diode

A hybrid structure of CdSe quantum dots (QDs) (λ = 640nm) spin-coated on the indium gallium nitride (InGaN) nanorod light-emitting diode (LED, λ = 525nm) is successfully fabricated. Experimental results indicate that the randomness and the minuteness of nanorods scatter the upcoming green light into the surrounding CdSe QDs efficiently, subsequently alleviating the likelihood of the emitted photons of red emission being recaptured by the CdSe QDs (self-absorption effect), and that increases the coupling probability of emission lights and the overall conversion efficiency. Moreover, the revealed structure with high color stability provides an alternative solution for general lighting applications of next generation.