Abstract
Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.
| Original language | English |
|---|---|
| Article number | 113312 |
| Pages (from-to) | 1133121-1133124 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 64 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2001 Sept 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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