Enhancement of the direct optical transition in nanocrystallized GaAsN alloys

S. Gwo, S. Y. Huang, T. R. Yang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Using x-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and infrared absorption techniques, we have investigated the effects of nanocrystallization on the structural and optical properties of GaAs0.99N0.01 grown by plasma-enhanced molecular-beam epitaxy. The x-ray diffraction results of postgrowth annealed samples with a protective Si3N4 cap exhibit significant lattice relaxation, structural inhomogeneity, and apparent nitrogen "loss," indicating the occurrence of phase separation after thermal treatment. High-resolution XTEM confirms the formation of N-enriched GaAsN nanocrystals embedded at the GaAsN/Si3N4 interface. Infrared absorption study demonstrates that the annealed sample has a strongly enhanced direct optical transition.

Original languageEnglish
Article number113312
Pages (from-to)1133121-1133124
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number11
DOIs
Publication statusPublished - 2001 Sep 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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