Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal

H. C. Hung, C. J. Wu, T. J. Yang, S. J. Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this work, the enhancement in photonic band gap (PBG) in a dielectric-semiconductor photonic crystal (DS PC) is investigated. We consider two possible schemes that can be used to enhance the PBG in the near-infrared region. The first scheme is to add an ultrathin metal layer into the DS PC such that a structure of ternary metal-dielectric-semiconductor (MDS) PC is formed. The second scheme is to make use of the heterostructured PC. In scheme 1, it is found that the addition of metal layer will significantly move the left band edge to the shorter wavelength position, leading to an enlargement in the PBG. This enlargement can be extended as the thickness of metal film is increased. In addition, a pronounced enhancement in PBG is achieved when the metal with a higher plasma frequency is used. In scheme 2, we find that the PBG can be significantly enlarged compared to scheme 1. In addition, the increase in the band extension is shown to be four times larger than that in scheme 1. The results illustrate that, in order to enhance the PBG, the use of scheme 2 is superior to scheme 1. The enhancement of nearinfrared (NIR) PBG is of technical use in the optical communications.

Original languageEnglish
Pages (from-to)219-235
Number of pages17
JournalProgress in Electromagnetics Research
Volume125
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Photonic band gap
Photonic crystals
photonics
Semiconductor materials
Infrared radiation
augmentation
crystals
Metals
metals
Optical communication
plasma frequencies
metal films
optical communication
Plasmas
Wavelength

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal. / Hung, H. C.; Wu, C. J.; Yang, T. J.; Chang, S. J.

In: Progress in Electromagnetics Research, Vol. 125, 01.01.2012, p. 219-235.

Research output: Contribution to journalArticle

@article{ebf687d1173449b2abba2c12c2ec420b,
title = "Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal",
abstract = "In this work, the enhancement in photonic band gap (PBG) in a dielectric-semiconductor photonic crystal (DS PC) is investigated. We consider two possible schemes that can be used to enhance the PBG in the near-infrared region. The first scheme is to add an ultrathin metal layer into the DS PC such that a structure of ternary metal-dielectric-semiconductor (MDS) PC is formed. The second scheme is to make use of the heterostructured PC. In scheme 1, it is found that the addition of metal layer will significantly move the left band edge to the shorter wavelength position, leading to an enlargement in the PBG. This enlargement can be extended as the thickness of metal film is increased. In addition, a pronounced enhancement in PBG is achieved when the metal with a higher plasma frequency is used. In scheme 2, we find that the PBG can be significantly enlarged compared to scheme 1. In addition, the increase in the band extension is shown to be four times larger than that in scheme 1. The results illustrate that, in order to enhance the PBG, the use of scheme 2 is superior to scheme 1. The enhancement of nearinfrared (NIR) PBG is of technical use in the optical communications.",
author = "Hung, {H. C.} and Wu, {C. J.} and Yang, {T. J.} and Chang, {S. J.}",
year = "2012",
month = "1",
day = "1",
doi = "10.2528/PIER12010311",
language = "English",
volume = "125",
pages = "219--235",
journal = "Progress in Electromagnetics Research",
issn = "1070-4698",
publisher = "Electromagnetics Academy",

}

TY - JOUR

T1 - Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal

AU - Hung, H. C.

AU - Wu, C. J.

AU - Yang, T. J.

AU - Chang, S. J.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - In this work, the enhancement in photonic band gap (PBG) in a dielectric-semiconductor photonic crystal (DS PC) is investigated. We consider two possible schemes that can be used to enhance the PBG in the near-infrared region. The first scheme is to add an ultrathin metal layer into the DS PC such that a structure of ternary metal-dielectric-semiconductor (MDS) PC is formed. The second scheme is to make use of the heterostructured PC. In scheme 1, it is found that the addition of metal layer will significantly move the left band edge to the shorter wavelength position, leading to an enlargement in the PBG. This enlargement can be extended as the thickness of metal film is increased. In addition, a pronounced enhancement in PBG is achieved when the metal with a higher plasma frequency is used. In scheme 2, we find that the PBG can be significantly enlarged compared to scheme 1. In addition, the increase in the band extension is shown to be four times larger than that in scheme 1. The results illustrate that, in order to enhance the PBG, the use of scheme 2 is superior to scheme 1. The enhancement of nearinfrared (NIR) PBG is of technical use in the optical communications.

AB - In this work, the enhancement in photonic band gap (PBG) in a dielectric-semiconductor photonic crystal (DS PC) is investigated. We consider two possible schemes that can be used to enhance the PBG in the near-infrared region. The first scheme is to add an ultrathin metal layer into the DS PC such that a structure of ternary metal-dielectric-semiconductor (MDS) PC is formed. The second scheme is to make use of the heterostructured PC. In scheme 1, it is found that the addition of metal layer will significantly move the left band edge to the shorter wavelength position, leading to an enlargement in the PBG. This enlargement can be extended as the thickness of metal film is increased. In addition, a pronounced enhancement in PBG is achieved when the metal with a higher plasma frequency is used. In scheme 2, we find that the PBG can be significantly enlarged compared to scheme 1. In addition, the increase in the band extension is shown to be four times larger than that in scheme 1. The results illustrate that, in order to enhance the PBG, the use of scheme 2 is superior to scheme 1. The enhancement of nearinfrared (NIR) PBG is of technical use in the optical communications.

UR - http://www.scopus.com/inward/record.url?scp=84863229954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863229954&partnerID=8YFLogxK

U2 - 10.2528/PIER12010311

DO - 10.2528/PIER12010311

M3 - Article

AN - SCOPUS:84863229954

VL - 125

SP - 219

EP - 235

JO - Progress in Electromagnetics Research

JF - Progress in Electromagnetics Research

SN - 1070-4698

ER -