Enhancement of magnetoresistance in Co(1100)/Cr(211) bilayered films on MaO(110)

Y. D. Yao, Y. Liou, J. C.A. Huang, S. Y. Liao, I. Klik, W. T. Yang, C. P. Chang, C. K. Lo

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Abstract

Epitaxial Co/Cr bilayered films have been successfully grown on the MgO(100) and MgO(110) substrates by molecular-beam epitaxy. According to the reflection high-energy electron-diffraction and x-ray-diffraction measurements the crystal structure of the film depends on orientation of the buffer and substrate. Epitaxial growth of biaxial Co(1120)/Cr(100) on MgO(100) substrate and of uniaxial Co(1100)/Cr(211) on MgO(110) substrate has been confirmed. The anisotropy magnetoresistance (AMR) is strongly influenced by the orientation of the Cr buffer. In Co(1120)/Cr(100) on MgO(100) AMR is isotropic for all in-plane fields. However, for Co(1100)/Cr(211) on MgO(110) we observed enhancement of AMR along the easy axis for temperatures below 150 K, while along the hard axis AMR has a local maximum at about 150 K. The easy axis data suggest that the longitudinal spin density wave of Cr and the crystal anisotropy of Co on Cr(211) plane dominate the enhancement of the AMR.

Original languageEnglish
Pages (from-to)6533-6535
Number of pages3
JournalJournal of Applied Physics
Volume79
Issue number8 PART 2B
Publication statusPublished - 1996 Apr 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Yao, Y. D., Liou, Y., Huang, J. C. A., Liao, S. Y., Klik, I., Yang, W. T., Chang, C. P., & Lo, C. K. (1996). Enhancement of magnetoresistance in Co(1100)/Cr(211) bilayered films on MaO(110). Journal of Applied Physics, 79(8 PART 2B), 6533-6535.