Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Shu Ming Hsu; Yun Shiuan Li; Min Sheng Tu; Jyun Ci He; I. Chung Chiu; Pin Guang Chen; Min Hung Lee; Jian Zhang Chen; I. Chun Cheng

doi:10.1109/AM-FPD.2016.7543648

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers

Shu Ming Hsu
, Yun Shiuan Li
, Min Sheng Tu
, Jyun Ci He
, I. Chung Chiu
, Pin Guang Chen
, Min Hung Lee
, Jian Zhang Chen
, I. Chun Cheng

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiN_x/HfO₂ layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	153-156
Number of pages	4
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543648
Publication status	Published - 2016 Aug 15
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 2016 Jul 6 → 2016 Jul 8

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	2016/07/06 → 2016/07/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2016.7543648

Cite this

Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., Lee, M. H., Chen, J. Z., & Cheng, I. C. (2016). Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 153-156). Article 7543648 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543648

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. / Hsu, Shu Ming; Li, Yun Shiuan; Tu, Min Sheng et al.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 153-156 7543648 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsu, SM, Li, YS, Tu, MS, He, JC, Chiu, IC, Chen, PG, Lee, MH, Chen, JZ & Cheng, IC 2016, Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543648, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 153-156, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 2016/07/06. https://doi.org/10.1109/AM-FPD.2016.7543648

Hsu SM, Li YS, Tu MS, He JC, Chiu IC, Chen PG et al. Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 153-156. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543648

Hsu, Shu Ming ; Li, Yun Shiuan ; Tu, Min Sheng et al. / Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 153-156 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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abstract = "In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.",

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AU - Tu, Min Sheng

AU - He, Jyun Ci

AU - Chiu, I. Chung

AU - Chen, Pin Guang

AU - Lee, Min Hung

AU - Chen, Jian Zhang

AU - Cheng, I. Chun

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AB - In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

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