Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Shu Ming Hsu; Yun Shiuan Li; Min Sheng Tu; Jyun Ci He; I. Chung Chiu; Pin Guang Chen; Min Hung Lee; Jian Zhang Chen; I. Chun Cheng

doi:10.1109/AM-FPD.2016.7543648

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers

Shu Ming Hsu, Yun Shiuan Li, Min Sheng Tu, Jyun Ci He, I. Chung Chiu, Pin Guang Chen, Min Hung Lee, Jian Zhang Chen, I. Chun Cheng

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiN_x/HfO₂ layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	153-156
Number of pages	4
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543648
Publication status	Published - 2016 Aug 15
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 2016 Jul 6 → 2016 Jul 8

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	2016/07/06 → 2016/07/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2016.7543648

Cite this

Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., Lee, M. H., Chen, J. Z., & Cheng, I. C. (2016). Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 153-156). Article 7543648 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543648

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. / Hsu, Shu Ming; Li, Yun Shiuan; Tu, Min Sheng et al.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 153-156 7543648 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsu, SM, Li, YS, Tu, MS, He, JC, Chiu, IC, Chen, PG, Lee, MH, Chen, JZ & Cheng, IC 2016, Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543648, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 153-156, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 2016/07/06. https://doi.org/10.1109/AM-FPD.2016.7543648

Hsu SM, Li YS, Tu MS, He JC, Chiu IC, Chen PG et al. Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 153-156. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543648

Hsu, Shu Ming ; Li, Yun Shiuan ; Tu, Min Sheng et al. / Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 153-156 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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abstract = "In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.",

author = "Hsu, {Shu Ming} and Li, {Yun Shiuan} and Tu, {Min Sheng} and He, {Jyun Ci} and Chiu, {I. Chung} and Chen, {Pin Guang} and Lee, {Min Hung} and Chen, {Jian Zhang} and Cheng, {I. Chun}",

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AU - He, Jyun Ci

AU - Chiu, I. Chung

AU - Chen, Pin Guang

AU - Lee, Min Hung

AU - Chen, Jian Zhang

AU - Cheng, I. Chun

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AB - In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

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