Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Shu Ming Hsu, Yun Shiuan Li, Min Sheng Tu, Jyun Ci He, I. Chung Chiu, Pin Guang Chen, Min Hung Lee, Jian Zhang Chen, I. Chun Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages153-156
Number of pages4
ISBN (Electronic)9784990875312
DOIs
Publication statusPublished - 2016 Aug 15
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 2016 Jul 62016 Jul 8

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period16/7/616/7/8

Fingerprint

Thin film transistors
Passivation
Threshold voltage
Oxygen
Adsorption
Molecules

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., ... Cheng, I. C. (2016). Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 153-156). [7543648] (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543648

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers. / Hsu, Shu Ming; Li, Yun Shiuan; Tu, Min Sheng; He, Jyun Ci; Chiu, I. Chung; Chen, Pin Guang; Lee, Min Hung; Chen, Jian Zhang; Cheng, I. Chun.

Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 153-156 7543648 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hsu, SM, Li, YS, Tu, MS, He, JC, Chiu, IC, Chen, PG, Lee, MH, Chen, JZ & Cheng, IC 2016, Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543648, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 153-156, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 16/7/6. https://doi.org/10.1109/AM-FPD.2016.7543648
Hsu SM, Li YS, Tu MS, He JC, Chiu IC, Chen PG et al. Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 153-156. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). https://doi.org/10.1109/AM-FPD.2016.7543648
Hsu, Shu Ming ; Li, Yun Shiuan ; Tu, Min Sheng ; He, Jyun Ci ; Chiu, I. Chung ; Chen, Pin Guang ; Lee, Min Hung ; Chen, Jian Zhang ; Cheng, I. Chun. / Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 153-156 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).
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AU - Hsu, Shu Ming

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AU - Tu, Min Sheng

AU - He, Jyun Ci

AU - Chiu, I. Chung

AU - Chen, Pin Guang

AU - Lee, Min Hung

AU - Chen, Jian Zhang

AU - Cheng, I. Chun

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N2 - In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

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