Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Shu Ming Hsu, Yun Shiuan Li, Min Sheng Tu, Jyun Ci He, I. Chung Chiu, Pin Guang Chen, Min Hung Lee, Jian Zhang Chen, I. Chun Cheng

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 μA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one.

    Original languageEnglish
    Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
    Subtitle of host publicationTFT Technologies and FPD Materials
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages153-156
    Number of pages4
    ISBN (Electronic)9784990875312
    DOIs
    Publication statusPublished - 2016 Aug 15
    Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
    Duration: 2016 Jul 62016 Jul 8

    Publication series

    NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

    Other

    Other23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
    CountryJapan
    CityKyoto
    Period2016/07/062016/07/08

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Hardware and Architecture
    • Electrical and Electronic Engineering

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