Enhancement of exchange field in CoFeIrMn by OsCu buffer layer

Tai Yen Peng, San Yuan Chen, C. K. Lo, Y. D. Yao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Enhancement of exchange field (Hex) and thermal stability of the textured CoFeIrMn with OsCu buffer layer and Os diffusion barrier layer were studied. As revealed by x-ray Diffraction (XRD), an Os (0002) surface mesh was observed to form on Cu (100)/Si (100). The growth of CoFe (111)/IrMn (111) on such a template is parallel to the Os (0002). With the OsCu buffer layer, the CoFeIrMn presents an enhancement of 70 Oe on Hex larger than that without OsCu. The Hex of the textured sample was 230 Oe at room temperature and it was increased to 330 Oe after 250 °C annealing. When the temperature reached 350 °C, Hex vanished. The increment of the temperature at which the textured and the nontextured sample obtaining their maximum Hex and the vanishing temperature of Hex were 50 and 75 °C, respectively. Furthermore, the CoFeOs (d) IrMn slowed down the Hex degradation. The sample with d=0.3 nm obtained its maximum Hex at 250 °C and vanished when it reached 400 °C. The combination of CoFeIrMn with OsCu buffer layer and Os barrier layer made the Hex higher and also better thermal stability.

Original languageEnglish
Article number09E514
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 2007 May 22

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buffers
barrier layers
augmentation
thermal stability
temperature
mesh
x ray diffraction
templates
degradation
annealing
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Enhancement of exchange field in CoFeIrMn by OsCu buffer layer. / Peng, Tai Yen; Chen, San Yuan; Lo, C. K.; Yao, Y. D.

In: Journal of Applied Physics, Vol. 101, No. 9, 09E514, 22.05.2007.

Research output: Contribution to journalArticle

Peng, Tai Yen ; Chen, San Yuan ; Lo, C. K. ; Yao, Y. D. / Enhancement of exchange field in CoFeIrMn by OsCu buffer layer. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 9.
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