Enhancement of electrical characteristics and reliability in crystallized ZrO 2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Jhih Jie Huang, Li Tien Huang, Meng Chen Tsai, Min Hung Lee, Miin Jang Chen

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The crystallized ZrO 2 high-K gate dielectrics treated with in-situ atomic layer doping of nitrogen using remote N 2 and NH 3 plasma were investigated, to suppress the capacitance equivalent thickness (CET), leakage current density (J g ), and interfacial state density (D it ). The stress-induced leakage current (SILC) was reduced significantly as well. The tetragonal/cubic phase of ZrO 2 was formed by post metallization annealing at a low temperature of 450 °C to offer a high dielectric constant of the gate oxide. The in-situ atomic layer doping of nitrogen using the remote NH 3 plasma contributes to the deactivation of the oxygen vacancies and the well passivation of D it . Accordingly, a suppressed J g of 4.79 × 10 -5 A cm -2 and D it of 3.96 × 10 11 cm -2 eV -1 were realized in the crystallized ZrO 2 gate oxide with a low CET of 1.35 nm. The gate dielectrics were also optically examined by the photoluminescence from the high-K/Si interface, indicating that the D it is highly correlated with the hydrogen passivation originating from the remote NH 3 plasma. The results indicate that in-situ atomic layer doping of nitrogen is an applicable and effective technique to improve the electrical properties of crystallized gate dielectrics in the advanced metal-oxide-semiconductor devices.

Original languageEnglish
Pages (from-to)214-220
Number of pages7
JournalApplied Surface Science
Volume305
DOIs
Publication statusPublished - 2014 Jun 30

Fingerprint

Gate dielectrics
Nitrogen
Doping (additives)
Plasmas
Passivation
nitrogen
Leakage currents
Oxides
augmentation
Capacitance
MOS devices
passivity
Oxygen vacancies
Metallizing
leakage
capacitance
Hydrogen
Photoluminescence
Electric properties
Permittivity

Keywords

  • Atomic layer deposition
  • High-K gate dielectrics
  • In-situ atomic layer doping
  • Remote plasma
  • Zirconium oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Enhancement of electrical characteristics and reliability in crystallized ZrO 2 gate dielectrics treated with in-situ atomic layer doping of nitrogen . / Huang, Jhih Jie; Huang, Li Tien; Tsai, Meng Chen; Lee, Min Hung; Chen, Miin Jang.

In: Applied Surface Science, Vol. 305, 30.06.2014, p. 214-220.

Research output: Contribution to journalArticle

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