Enhancement of electrical characteristics and reliability in crystallized ZrO 2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Jhih Jie Huang, Li Tien Huang, Meng Chen Tsai, Min Hung Lee, Miin Jang Chen

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8 Citations (Scopus)


The crystallized ZrO 2 high-K gate dielectrics treated with in-situ atomic layer doping of nitrogen using remote N 2 and NH 3 plasma were investigated, to suppress the capacitance equivalent thickness (CET), leakage current density (J g ), and interfacial state density (D it ). The stress-induced leakage current (SILC) was reduced significantly as well. The tetragonal/cubic phase of ZrO 2 was formed by post metallization annealing at a low temperature of 450 °C to offer a high dielectric constant of the gate oxide. The in-situ atomic layer doping of nitrogen using the remote NH 3 plasma contributes to the deactivation of the oxygen vacancies and the well passivation of D it . Accordingly, a suppressed J g of 4.79 × 10 -5 A cm -2 and D it of 3.96 × 10 11 cm -2 eV -1 were realized in the crystallized ZrO 2 gate oxide with a low CET of 1.35 nm. The gate dielectrics were also optically examined by the photoluminescence from the high-K/Si interface, indicating that the D it is highly correlated with the hydrogen passivation originating from the remote NH 3 plasma. The results indicate that in-situ atomic layer doping of nitrogen is an applicable and effective technique to improve the electrical properties of crystallized gate dielectrics in the advanced metal-oxide-semiconductor devices.

Original languageEnglish
Pages (from-to)214-220
Number of pages7
JournalApplied Surface Science
Publication statusPublished - 2014 Jun 30



  • Atomic layer deposition
  • High-K gate dielectrics
  • In-situ atomic layer doping
  • Remote plasma
  • Zirconium oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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