Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao; Hung Kuo Tsai; Hsiao Wen Zan; Yung Hsuan Hsu; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.3586255

Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao, Hung Kuo Tsai, Hsiao Wen Zan^*, Yung Hsuan Hsu, Hsin Fei Meng, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 10⁴. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

Original language	English
Article number	223303
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3586255
Publication status	Published - 2011 May 30
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade",

abstract = "In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.",

author = "Chao, {Yu Chiang} and Tsai, {Hung Kuo} and Zan, {Hsiao Wen} and Hsu, {Yung Hsuan} and Meng, {Hsin Fei} and Horng, {Sheng Fu}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC 99-2628-M-009-001.",

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doi = "10.1063/1.3586255",

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T1 - Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

AU - Chao, Yu Chiang

AU - Tsai, Hung Kuo

AU - Zan, Hsiao Wen

AU - Hsu, Yung Hsuan

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC 99-2628-M-009-001.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

AB - In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

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Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

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