Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade

Yu Chiang Chao, Hung Kuo Tsai, Hsiao Wen Zan, Yung Hsuan Hsu, Hsin Fei Meng, Sheng Fu Horng

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing.

    Original languageEnglish
    Article number223303
    JournalApplied Physics Letters
    Volume98
    Issue number22
    DOIs
    Publication statusPublished - 2011 May 30

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint

    Dive into the research topics of 'Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade'. Together they form a unique fingerprint.

    Cite this