Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

W. C. Chien; C. K. Lo; L. C. Hsieh; Y. D. Yao; X. F. Han; Z. M. Zeng; T. Y. Peng; P. Lin

doi:10.1063/1.2374807

Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

W. C. Chien, C. K. Lo, L. C. Hsieh, Y. D. Yao^*, X. F. Han, Z. M. Zeng, T. Y. Peng, P. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru (5 nm) Cu (10 nm) Ru (5 nm) IrMn (10 nm) CoFeB (4 nm) Al (1.2 nm) -oxideCoFeB (4 nm) Ru (5 nm). A huge change of more than ±17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency.

Original language	English
Article number	202515
Journal	Applied Physics Letters
Volume	89
Issue number	20
DOIs	https://doi.org/10.1063/1.2374807
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2374807

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title = "Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency",

abstract = "The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru (5 nm) Cu (10 nm) Ru (5 nm) IrMn (10 nm) CoFeB (4 nm) Al (1.2 nm) -oxideCoFeB (4 nm) Ru (5 nm). A huge change of more than ±17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency.",

author = "Chien, {W. C.} and Lo, {C. K.} and Hsieh, {L. C.} and Yao, {Y. D.} and Han, {X. F.} and Zeng, {Z. M.} and Peng, {T. Y.} and P. Lin",

note = "Funding Information: The authors would like to thank the financial support by the Nano-research project between Academia Sinica and Industrial Technology Research Institute, and by the ROC MOEA and NSC under Grant Nos. 5301-(XS4210&XSY240) and 95-2112-M-001-059, respectively.",

year = "2006",

doi = "10.1063/1.2374807",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

AU - Chien, W. C.

AU - Lo, C. K.

AU - Hsieh, L. C.

AU - Yao, Y. D.

AU - Han, X. F.

AU - Zeng, Z. M.

AU - Peng, T. Y.

AU - Lin, P.

N1 - Funding Information: The authors would like to thank the financial support by the Nano-research project between Academia Sinica and Industrial Technology Research Institute, and by the ROC MOEA and NSC under Grant Nos. 5301-(XS4210&XSY240) and 95-2112-M-001-059, respectively.

PY - 2006

Y1 - 2006

N2 - The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru (5 nm) Cu (10 nm) Ru (5 nm) IrMn (10 nm) CoFeB (4 nm) Al (1.2 nm) -oxideCoFeB (4 nm) Ru (5 nm). A huge change of more than ±17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency.

AB - The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru (5 nm) Cu (10 nm) Ru (5 nm) IrMn (10 nm) CoFeB (4 nm) Al (1.2 nm) -oxideCoFeB (4 nm) Ru (5 nm). A huge change of more than ±17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency.

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JF - Applied Physics Letters

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Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency

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