Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation

C. W. Liu, C. H. Lin, M. H. Lee, S. T. Chang, Y. H. Liu, Miin Jang Chen, Ching Fuh Lin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The reliability of electroluminescence from metal-oxide-silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples.

Original languageEnglish
Pages (from-to)1397-1399
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number10
DOIs
Publication statusPublished - 2001 Mar 5

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electroluminescence
metal oxides
deuterium
diodes
silicon
light emission
hydrogen
annealing
output
electron tunneling
light emitting diodes
degradation
electrodes
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation. / Liu, C. W.; Lin, C. H.; Lee, M. H.; Chang, S. T.; Liu, Y. H.; Chen, Miin Jang; Lin, Ching Fuh.

In: Applied Physics Letters, Vol. 78, No. 10, 05.03.2001, p. 1397-1399.

Research output: Contribution to journalArticle

Liu, C. W. ; Lin, C. H. ; Lee, M. H. ; Chang, S. T. ; Liu, Y. H. ; Chen, Miin Jang ; Lin, Ching Fuh. / Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation. In: Applied Physics Letters. 2001 ; Vol. 78, No. 10. pp. 1397-1399.
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