Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

Che Wei Chang; Di Yan Wang; Wei Chun Tan; I. Sheng Huang; I. Sheng Wang; Chia Chun Chen; Ying Jay Yang; Yang Fang Chen

doi:10.1063/1.4746763

Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

Che Wei Chang, Di Yan Wang, Wei Chun Tan, I. Sheng Huang, I. Sheng Wang, Chia Chun Chen, Ying Jay Yang, Yang Fang Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20. Our approach would expand numerous applications for graphene-based optoelectronic devices.

Original language	English
Article number	073906
Journal	Applied Physics Letters
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.4746763
Publication status	Published - 2012 Aug 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene",

abstract = "We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20. Our approach would expand numerous applications for graphene-based optoelectronic devices.",

author = "Chang, {Che Wei} and Wang, {Di Yan} and Tan, {Wei Chun} and Huang, {I. Sheng} and Wang, {I. Sheng} and Chen, {Chia Chun} and Yang, {Ying Jay} and Chen, {Yang Fang}",

note = "Funding Information: This work was supported by the National Science Council and the Ministry of Education of the Republic of China.",

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doi = "10.1063/1.4746763",

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T1 - Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

AU - Chang, Che Wei

AU - Wang, Di Yan

AU - Tan, Wei Chun

AU - Huang, I. Sheng

AU - Wang, I. Sheng

AU - Chen, Chia Chun

AU - Yang, Ying Jay

AU - Chen, Yang Fang

N1 - Funding Information: This work was supported by the National Science Council and the Ministry of Education of the Republic of China.

PY - 2012/8/13

Y1 - 2012/8/13

N2 - We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20. Our approach would expand numerous applications for graphene-based optoelectronic devices.

AB - We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20. Our approach would expand numerous applications for graphene-based optoelectronic devices.

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Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

Abstract

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