Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

Che Wei Chang, Di Yan Wang, Wei Chun Tan, I. Sheng Huang, I. Sheng Wang, Chia Chun Chen, Ying Jay Yang, Yang Fang Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20. Our approach would expand numerous applications for graphene-based optoelectronic devices.

Original languageEnglish
Article number073906
JournalApplied Physics Letters
Volume101
Issue number7
DOIs
Publication statusPublished - 2012 Aug 13

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reflectors
photometers
graphene
solar cells
optoelectronic devices
insertion
silicon
cells
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene. / Chang, Che Wei; Wang, Di Yan; Tan, Wei Chun; Huang, I. Sheng; Wang, I. Sheng; Chen, Chia Chun; Yang, Ying Jay; Chen, Yang Fang.

In: Applied Physics Letters, Vol. 101, No. 7, 073906, 13.08.2012.

Research output: Contribution to journalArticle

Chang, Che Wei ; Wang, Di Yan ; Tan, Wei Chun ; Huang, I. Sheng ; Wang, I. Sheng ; Chen, Chia Chun ; Yang, Ying Jay ; Chen, Yang Fang. / Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene. In: Applied Physics Letters. 2012 ; Vol. 101, No. 7.
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