Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Tzu Neng Lin; Svette Reina Merden Santiago; Chi Tsu Yuan; Kuo Pin Chiu; Ji Lin Shen; Ting Chun Wang; Hao Chung Kuo; Ching Hsueh Chiu; Yung Chi Yao; Ya Ju Lee

doi:10.1038/s41598-017-07483-3

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Tzu Neng Lin, Svette Reina Merden Santiago, Chi Tsu Yuan, Kuo Pin Chiu, Ji Lin Shen^*, Ting Chun Wang, Hao Chung Kuo, Ching Hsueh Chiu, Yung Chi Yao, Ya Ju Lee

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

Original language	English
Article number	7108
Journal	Scientific reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-07483-3
Publication status	Published - 2017 Dec 1

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title = "Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots",

abstract = "Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.",

author = "Lin, {Tzu Neng} and Santiago, {Svette Reina Merden} and Yuan, {Chi Tsu} and Chiu, {Kuo Pin} and Shen, {Ji Lin} and Wang, {Ting Chun} and Kuo, {Hao Chung} and Chiu, {Ching Hsueh} and Yao, {Yung Chi} and Lee, {Ya Ju}",

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doi = "10.1038/s41598-017-07483-3",

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AU - Lin, Tzu Neng

AU - Santiago, Svette Reina Merden

AU - Yuan, Chi Tsu

AU - Chiu, Kuo Pin

AU - Shen, Ji Lin

AU - Wang, Ting Chun

AU - Kuo, Hao Chung

AU - Chiu, Ching Hsueh

AU - Yao, Yung Chi

AU - Lee, Ya Ju

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

AB - Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

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Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Abstract

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