Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Tzu Neng Lin, Svette Reina Merden Santiago, Chi Tsu Yuan, Kuo Pin Chiu, Ji Lin Shen, Ting Chun Wang, Hao Chung Kuo, Ching Hsueh Chiu, Yung Chi Yao, Ya Ju Lee

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9 Citations (Scopus)

Abstract

Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

Original languageEnglish
Article number7108
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

ASJC Scopus subject areas

  • General

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    Lin, T. N., Santiago, S. R. M., Yuan, C. T., Chiu, K. P., Shen, J. L., Wang, T. C., Kuo, H. C., Chiu, C. H., Yao, Y. C., & Lee, Y. J. (2017). Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots. Scientific reports, 7(1), [7108]. https://doi.org/10.1038/s41598-017-07483-3