Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Tzu Neng Lin, Svette Reina Merden Santiago, Chi Tsu Yuan, Kuo Pin Chiu, Ji Lin Shen, Ting Chun Wang, Hao Chung Kuo, Ching Hsueh Chiu, Yung Chi Yao, Ya Ju Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

Original languageEnglish
Article number7483
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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recycling
ultraviolet radiation
graphene
light emitting diodes
quantum dots
photons
electroluminescence
laser ablation
pulsed lasers
electrical properties
waveguides
optical properties
augmentation
output

ASJC Scopus subject areas

  • General

Cite this

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots. / Lin, Tzu Neng; Santiago, Svette Reina Merden; Yuan, Chi Tsu; Chiu, Kuo Pin; Shen, Ji Lin; Wang, Ting Chun; Kuo, Hao Chung; Chiu, Ching Hsueh; Yao, Yung Chi; Lee, Ya Ju.

In: Scientific Reports, Vol. 7, No. 1, 7483, 01.12.2017.

Research output: Contribution to journalArticle

Lin, TN, Santiago, SRM, Yuan, CT, Chiu, KP, Shen, JL, Wang, TC, Kuo, HC, Chiu, CH, Yao, YC & Lee, YJ 2017, 'Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots', Scientific Reports, vol. 7, no. 1, 7483. https://doi.org/10.1038/s41598-017-07483-3
Lin, Tzu Neng ; Santiago, Svette Reina Merden ; Yuan, Chi Tsu ; Chiu, Kuo Pin ; Shen, Ji Lin ; Wang, Ting Chun ; Kuo, Hao Chung ; Chiu, Ching Hsueh ; Yao, Yung Chi ; Lee, Ya Ju. / Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
@article{1c02e5d9bb1744dfb25f7a213d719a26,
title = "Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots",
abstract = "Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71{\%} after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.",
author = "Lin, {Tzu Neng} and Santiago, {Svette Reina Merden} and Yuan, {Chi Tsu} and Chiu, {Kuo Pin} and Shen, {Ji Lin} and Wang, {Ting Chun} and Kuo, {Hao Chung} and Chiu, {Ching Hsueh} and Yao, {Yung Chi} and Lee, {Ya Ju}",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-07483-3",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

AU - Lin, Tzu Neng

AU - Santiago, Svette Reina Merden

AU - Yuan, Chi Tsu

AU - Chiu, Kuo Pin

AU - Shen, Ji Lin

AU - Wang, Ting Chun

AU - Kuo, Hao Chung

AU - Chiu, Ching Hsueh

AU - Yao, Yung Chi

AU - Lee, Ya Ju

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

AB - Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

UR - http://www.scopus.com/inward/record.url?scp=85026797903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026797903&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-07483-3

DO - 10.1038/s41598-017-07483-3

M3 - Article

AN - SCOPUS:85026797903

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 7483

ER -