Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

Yung Chi Yao, Jung Min Hwang, Zu Po Yang, Jing Yu Haung, Chia Ching Lin, Wei Chen Shen, Chun Yang Chou, Mei Tan Wang, Chun Ying Huang, Ching Yu Chen, Meng Tsan Tsai, Tzu Neng Lin, Ji Lin Shen, Ya Ju Lee

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Abstract

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.

Original languageEnglish
Article number22659
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Mar 3

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Cite this

Yao, Y. C., Hwang, J. M., Yang, Z. P., Haung, J. Y., Lin, C. C., Shen, W. C., Chou, C. Y., Wang, M. T., Huang, C. Y., Chen, C. Y., Tsai, M. T., Lin, T. N., Shen, J. L., & Lee, Y. J. (2016). Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons. Scientific Reports, 6, [22659]. https://doi.org/10.1038/srep22659