Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

Yung Chi Yao, Jung Min Hwang, Zu Po Yang, Jing Yu Haung, Chia Ching Lin, Wei Chen Shen, Chun Yang Chou, Mei Tan Wang, Chun Ying Huang, Ching Yu Chen, Meng Tsan Tsai, Tzu Neng Lin, Ji Lin Shen, Ya Ju Lee

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30 Citations (Scopus)

Abstract

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.

Original languageEnglish
Article number22659
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Mar 3

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plasmons
quantum efficiency
light emitting diodes
augmentation
nanoparticles
surface plasmon resonance
finite difference time domain method
nanorods
escape
light scattering
waveguides
absorption spectra
electric fields
output
energy

ASJC Scopus subject areas

  • General

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Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons. / Yao, Yung Chi; Hwang, Jung Min; Yang, Zu Po; Haung, Jing Yu; Lin, Chia Ching; Shen, Wei Chen; Chou, Chun Yang; Wang, Mei Tan; Huang, Chun Ying; Chen, Ching Yu; Tsai, Meng Tsan; Lin, Tzu Neng; Shen, Ji Lin; Lee, Ya Ju.

In: Scientific Reports, Vol. 6, 22659, 03.03.2016.

Research output: Contribution to journalArticle

Yao, YC, Hwang, JM, Yang, ZP, Haung, JY, Lin, CC, Shen, WC, Chou, CY, Wang, MT, Huang, CY, Chen, CY, Tsai, MT, Lin, TN, Shen, JL & Lee, YJ 2016, 'Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons', Scientific Reports, vol. 6, 22659. https://doi.org/10.1038/srep22659
Yao, Yung Chi ; Hwang, Jung Min ; Yang, Zu Po ; Haung, Jing Yu ; Lin, Chia Ching ; Shen, Wei Chen ; Chou, Chun Yang ; Wang, Mei Tan ; Huang, Chun Ying ; Chen, Ching Yu ; Tsai, Meng Tsan ; Lin, Tzu Neng ; Shen, Ji Lin ; Lee, Ya Ju. / Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons. In: Scientific Reports. 2016 ; Vol. 6.
@article{7f073876e37f4a61a04a60ff3d234d92,
title = "Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons",
abstract = "Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.",
author = "Yao, {Yung Chi} and Hwang, {Jung Min} and Yang, {Zu Po} and Haung, {Jing Yu} and Lin, {Chia Ching} and Shen, {Wei Chen} and Chou, {Chun Yang} and Wang, {Mei Tan} and Huang, {Chun Ying} and Chen, {Ching Yu} and Tsai, {Meng Tsan} and Lin, {Tzu Neng} and Shen, {Ji Lin} and Lee, {Ya Ju}",
year = "2016",
month = "3",
day = "3",
doi = "10.1038/srep22659",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

AU - Yao, Yung Chi

AU - Hwang, Jung Min

AU - Yang, Zu Po

AU - Haung, Jing Yu

AU - Lin, Chia Ching

AU - Shen, Wei Chen

AU - Chou, Chun Yang

AU - Wang, Mei Tan

AU - Huang, Chun Ying

AU - Chen, Ching Yu

AU - Tsai, Meng Tsan

AU - Lin, Tzu Neng

AU - Shen, Ji Lin

AU - Lee, Ya Ju

PY - 2016/3/3

Y1 - 2016/3/3

N2 - Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.

AB - Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP.

UR - http://www.scopus.com/inward/record.url?scp=84960145970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960145970&partnerID=8YFLogxK

U2 - 10.1038/srep22659

DO - 10.1038/srep22659

M3 - Article

AN - SCOPUS:84960145970

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 22659

ER -