Enhanced exchange bias fields for CoO/Co bilayers

influence of antiferromagnetic grains and mechanisms

Cheng Hsun Tony Chang, Shin Chen Chang, Jyh-Shen Tsay, Yeong Der Yao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The emergence and optimization of devices that can be applied to spintronics have attracted considerable interest, and both experimental and theoretical approaches have been used in studies of exchange bias phenomena. A survey of the literature indicates that great efforts have been devoted to improving exchange bias fields, while only limited attempts have been made to controll the temperature dependence of exchange bias. In this study, the influence of antiferromagnetic grains on exchange bias phenomena in CoO/Co bilayers on a semiconductor surface was investigated. Based on an antiferromagnetic grain model, a correlation between grain size, grain density, blocking temperature, and the exchange bias field was established. For crystallites with a smaller median diameter, the dependence of the thickness of the CoO layer on blocking temperature showed a less pronounced variation. This is due to the larger thermal agitation of the atomic spin moments in the grain, which causes a weaker exchange coupling between atomic spin moments. The enhanced density of antiferromagnetic/ferromagnetic pinning sites resulting from an increased grain density is responsible for the enhancement in the exchange bias fields. The results reported herein provide insights into our knowledge related to controlling the temperature dependence of exchange bias and related mechanisms.

Original languageEnglish
Pages (from-to)316-320
Number of pages5
JournalApplied Surface Science
Volume405
DOIs
Publication statusPublished - 2017 May 31

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Temperature
Magnetoelectronics
Exchange coupling
Crystallites
Semiconductor materials
Hot Temperature

Keywords

  • Blocking temperature
  • Exchange bias field
  • Magnetic bilayer
  • Magnetic thin films
  • Oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Enhanced exchange bias fields for CoO/Co bilayers : influence of antiferromagnetic grains and mechanisms. / Chang, Cheng Hsun Tony; Chang, Shin Chen; Tsay, Jyh-Shen; Yao, Yeong Der.

In: Applied Surface Science, Vol. 405, 31.05.2017, p. 316-320.

Research output: Contribution to journalArticle

Chang, Cheng Hsun Tony ; Chang, Shin Chen ; Tsay, Jyh-Shen ; Yao, Yeong Der. / Enhanced exchange bias fields for CoO/Co bilayers : influence of antiferromagnetic grains and mechanisms. In: Applied Surface Science. 2017 ; Vol. 405. pp. 316-320.
@article{ac54db785a7b421992e02fa57df0e188,
title = "Enhanced exchange bias fields for CoO/Co bilayers: influence of antiferromagnetic grains and mechanisms",
abstract = "The emergence and optimization of devices that can be applied to spintronics have attracted considerable interest, and both experimental and theoretical approaches have been used in studies of exchange bias phenomena. A survey of the literature indicates that great efforts have been devoted to improving exchange bias fields, while only limited attempts have been made to controll the temperature dependence of exchange bias. In this study, the influence of antiferromagnetic grains on exchange bias phenomena in CoO/Co bilayers on a semiconductor surface was investigated. Based on an antiferromagnetic grain model, a correlation between grain size, grain density, blocking temperature, and the exchange bias field was established. For crystallites with a smaller median diameter, the dependence of the thickness of the CoO layer on blocking temperature showed a less pronounced variation. This is due to the larger thermal agitation of the atomic spin moments in the grain, which causes a weaker exchange coupling between atomic spin moments. The enhanced density of antiferromagnetic/ferromagnetic pinning sites resulting from an increased grain density is responsible for the enhancement in the exchange bias fields. The results reported herein provide insights into our knowledge related to controlling the temperature dependence of exchange bias and related mechanisms.",
keywords = "Blocking temperature, Exchange bias field, Magnetic bilayer, Magnetic thin films, Oxide",
author = "Chang, {Cheng Hsun Tony} and Chang, {Shin Chen} and Jyh-Shen Tsay and Yao, {Yeong Der}",
year = "2017",
month = "5",
day = "31",
doi = "10.1016/j.apsusc.2017.02.001",
language = "English",
volume = "405",
pages = "316--320",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced exchange bias fields for CoO/Co bilayers

T2 - influence of antiferromagnetic grains and mechanisms

AU - Chang, Cheng Hsun Tony

AU - Chang, Shin Chen

AU - Tsay, Jyh-Shen

AU - Yao, Yeong Der

PY - 2017/5/31

Y1 - 2017/5/31

N2 - The emergence and optimization of devices that can be applied to spintronics have attracted considerable interest, and both experimental and theoretical approaches have been used in studies of exchange bias phenomena. A survey of the literature indicates that great efforts have been devoted to improving exchange bias fields, while only limited attempts have been made to controll the temperature dependence of exchange bias. In this study, the influence of antiferromagnetic grains on exchange bias phenomena in CoO/Co bilayers on a semiconductor surface was investigated. Based on an antiferromagnetic grain model, a correlation between grain size, grain density, blocking temperature, and the exchange bias field was established. For crystallites with a smaller median diameter, the dependence of the thickness of the CoO layer on blocking temperature showed a less pronounced variation. This is due to the larger thermal agitation of the atomic spin moments in the grain, which causes a weaker exchange coupling between atomic spin moments. The enhanced density of antiferromagnetic/ferromagnetic pinning sites resulting from an increased grain density is responsible for the enhancement in the exchange bias fields. The results reported herein provide insights into our knowledge related to controlling the temperature dependence of exchange bias and related mechanisms.

AB - The emergence and optimization of devices that can be applied to spintronics have attracted considerable interest, and both experimental and theoretical approaches have been used in studies of exchange bias phenomena. A survey of the literature indicates that great efforts have been devoted to improving exchange bias fields, while only limited attempts have been made to controll the temperature dependence of exchange bias. In this study, the influence of antiferromagnetic grains on exchange bias phenomena in CoO/Co bilayers on a semiconductor surface was investigated. Based on an antiferromagnetic grain model, a correlation between grain size, grain density, blocking temperature, and the exchange bias field was established. For crystallites with a smaller median diameter, the dependence of the thickness of the CoO layer on blocking temperature showed a less pronounced variation. This is due to the larger thermal agitation of the atomic spin moments in the grain, which causes a weaker exchange coupling between atomic spin moments. The enhanced density of antiferromagnetic/ferromagnetic pinning sites resulting from an increased grain density is responsible for the enhancement in the exchange bias fields. The results reported herein provide insights into our knowledge related to controlling the temperature dependence of exchange bias and related mechanisms.

KW - Blocking temperature

KW - Exchange bias field

KW - Magnetic bilayer

KW - Magnetic thin films

KW - Oxide

UR - http://www.scopus.com/inward/record.url?scp=85013040875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013040875&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.02.001

DO - 10.1016/j.apsusc.2017.02.001

M3 - Article

VL - 405

SP - 316

EP - 320

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -