Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots

Chih Wei Hsu, Abhijit Ganguly, Chi Hui Liang, Yu Ting Hung, Chien Ting Wu, Geng Ming Hsu, Yang Fang Chen, Chia Chun Chen, Kuei Hsien Chen, Li Chyong Chen

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor-liquid-solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.

Original languageEnglish
Pages (from-to)938-942
Number of pages5
JournalAdvanced Functional Materials
Volume18
Issue number6
DOIs
Publication statusPublished - 2008 Mar 25

Fingerprint

Nitrides
Semiconductor quantum dots
Nanowires
nitrides
nanowires
quantum dots
Photoluminescence
photoluminescence
Growth temperature
red shift
temperature
Vapors
vapors
Transmission electron microscopy
catalysts
X ray diffraction
Temperature
transmission electron microscopy
microstructure
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Hsu, C. W., Ganguly, A., Liang, C. H., Hung, Y. T., Wu, C. T., Hsu, G. M., ... Chen, L. C. (2008). Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots. Advanced Functional Materials, 18(6), 938-942. https://doi.org/10.1002/adfm.200700739

Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots. / Hsu, Chih Wei; Ganguly, Abhijit; Liang, Chi Hui; Hung, Yu Ting; Wu, Chien Ting; Hsu, Geng Ming; Chen, Yang Fang; Chen, Chia Chun; Chen, Kuei Hsien; Chen, Li Chyong.

In: Advanced Functional Materials, Vol. 18, No. 6, 25.03.2008, p. 938-942.

Research output: Contribution to journalArticle

Hsu, CW, Ganguly, A, Liang, CH, Hung, YT, Wu, CT, Hsu, GM, Chen, YF, Chen, CC, Chen, KH & Chen, LC 2008, 'Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots', Advanced Functional Materials, vol. 18, no. 6, pp. 938-942. https://doi.org/10.1002/adfm.200700739
Hsu, Chih Wei ; Ganguly, Abhijit ; Liang, Chi Hui ; Hung, Yu Ting ; Wu, Chien Ting ; Hsu, Geng Ming ; Chen, Yang Fang ; Chen, Chia Chun ; Chen, Kuei Hsien ; Chen, Li Chyong. / Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots. In: Advanced Functional Materials. 2008 ; Vol. 18, No. 6. pp. 938-942.
@article{386460ab338949a9bf2c2e45bcd7de20,
title = "Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots",
abstract = "We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor-liquid-solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.",
author = "Hsu, {Chih Wei} and Abhijit Ganguly and Liang, {Chi Hui} and Hung, {Yu Ting} and Wu, {Chien Ting} and Hsu, {Geng Ming} and Chen, {Yang Fang} and Chen, {Chia Chun} and Chen, {Kuei Hsien} and Chen, {Li Chyong}",
year = "2008",
month = "3",
day = "25",
doi = "10.1002/adfm.200700739",
language = "English",
volume = "18",
pages = "938--942",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "6",

}

TY - JOUR

T1 - Enhanced emission of (In, Ga) nitride nanowires embedded with self-assembled quantum dots

AU - Hsu, Chih Wei

AU - Ganguly, Abhijit

AU - Liang, Chi Hui

AU - Hung, Yu Ting

AU - Wu, Chien Ting

AU - Hsu, Geng Ming

AU - Chen, Yang Fang

AU - Chen, Chia Chun

AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

PY - 2008/3/25

Y1 - 2008/3/25

N2 - We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor-liquid-solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.

AB - We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor-liquid-solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.

UR - http://www.scopus.com/inward/record.url?scp=41549089178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549089178&partnerID=8YFLogxK

U2 - 10.1002/adfm.200700739

DO - 10.1002/adfm.200700739

M3 - Article

AN - SCOPUS:41549089178

VL - 18

SP - 938

EP - 942

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 6

ER -